The properties of Cu films for micromagnetic devices

被引：1

作者：

Kim, HS ^{[1
]}

Oh, YW

Song, JS

Min, BK

机构：

[1] Kyungnam Univ, Dept Inorgan Mat Engn, Kyungnam, South Korea

[2] Korea Electrotechnol Res Inst, Kyungnam, South Korea

[3] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1998年 / 177卷

关键词：

resistivity; adhesive force; dual deposition; thin films;

D O I：

10.1016/S0304-8853(97)00859-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cu films for micromagnetic devices were deposited by RF magnetron sputtering under various deposition conditions. Cu films deposited under the conditions of 100 W and 10 mTorr exhibited a resistivity as low as 2.4 mu Omega cm and dense structure, but poor adhesion. The Cu films grown at 200 W and 20 mTorr showed a good adhesive force and higher resistivity of 7 mu Omega cm due to the porous columnar structures formed. Cu films of 4 mu m thickness were also deposited by a dual deposition method. The films formed by this method had the resistivities of about 2.6 mu Omega cm and high adhesive force of about 6.86 N/cm(2), when the lower layer thickness was 1 mu m. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：907 / 908

页数：2