Activation of Mg-doped P-GaN by using two-step annealing

被引：27

作者：

Hwang, Jun-Dar ^{[1
]}

Yang, Gwo-Huei ^{[1
]}

机构：

[1] Da Yeh Univ, Dept Elect Engn, Changhua, Taiwan

来源：

APPLIED SURFACE SCIENCE | 2007年 / 253卷 / 10期

关键词：

optoelectronic device; rapid thermal annealing; Mg-doped p-type GaN film; photoluminescence; conventional furnace annealing;

D O I：

10.1016/j.apsusc.2006.10.026

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

One- and two-step rapid thermal annealing (RTA) for activating Mg-doped p-type GaN films had been performed to compare with conventional furnace annealing (CFA). The two-step annealing process consists of two annealing steps: the first step is performed at 750 degrees C for 1 min and the second step is performed at 600 degrees C for 5 min in pure O-2 or air ambient. It is found that the samples annealed in air ambient exhibit poor electrical properties as compared to those annealed in pure O-2. Compared to one-step RTA annealing and CFA annealing, the samples with two-step annealing exhibit higher hole concentration and lower resistivity. This means that the two-step annealing is a powerful method to enhance the electrical performance of Mg-doped p-type GaN films. Similar results were also evidenced by photoluminescence (PL) measurement. Possible mechanism was confirmed by secondary ion mass spectrometry analysis. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：4694 / 4697

页数：4

共 10 条

[1] Thin-film transistors with polycrystalline silicon films prepared by two-step rapid thermal annealing [J].

Cheng, HC ;

Huang, CY ;

Wang, FS ;

Lin, KH ;

Tarntair, FG .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (1AB) :L19-L21

[2] ELECTRONIC-STRUCTURES AND DOPING OF INN, INXGA1-XN, AND INXAL1-XN [J].

JENKINS, DW ;

DOW, JD .

PHYSICAL REVIEW B, 1989, 39 (05) :3317-3329

[3] Reactivation of Mg acceptor in Mg-doped GaN by nitrogen plasma treatment [J].

Kim, SW ;

Lee, JM ;

Huh, C ;

Park, NM ;

Kim, HS ;

Lee, IH ;

Park, SJ .

APPLIED PHYSICS LETTERS, 2000, 76 (21) :3079-3081

[4] Low temperature activation of Mg-doped GaN in O2 ambient [J].

Kuo, CH ;

Chang, SJ ;

Su, YK ;

Wu, LW ;

Sheu, JK ;

Chen, CH ;

Chi, GC .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (2A) :L112-L114

[5] Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Sugimoto, Y ;

Kiyoku, H .

APPLIED PHYSICS LETTERS, 1997, 70 (07) :868-870

[6] THERMAL ANNEALING EFFECTS ON P-TYPE MG-DOPED GAN FILMS [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M ;

IWASA, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, 31 (2B) :L139-L142

[7]

NAKAMURA S, 1994, APPL PHYS LETT, V64, P1689

[8]

Nakamura S., 1995, JPN J APPL PHYS, V34, P797

[9]

PANKOVE JI, 1990, MATER RES SOC SYMP P, V162, P515

[10]

Plummer J.D., SILICON VLSI TECHNOL

← 1 →