GaAs(111) A and B surfaces in hydrazine sulfide solutions: Extreme polarity dependence of surface adsorption processes

被引：7

作者：

Berkovits, V. L. ^{[2
]}

Ulin, V. P. ^{[2
]}

Tereshchenko, O. E. ^{[3
]}

Paget, D. ^{[1
]}

Rowe, A. C. H. ^{[1
]}

Chiaradia, P. ^{[4
,5
]}

Doyle, B. P. ^{[6
]}

Nannarone, S. ^{[6
,7
,8
]}

机构：

[1] Ecole Polytech, CNRS, F-91128 Palaiseau, France

[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] Novosibirsk State Univ, Inst Semicond Phys, Novosibirsk 630090, Russia

[4] Univ Roma Tor Vergata, Dipartimento Fis, CNISM Unit, I-00133 Rome, Italy

[5] Univ Roma Tor Vergata, NAST, I-00133 Rome, Italy

[6] CNR, INFM, Lab Nazl TASC, I-34012 Trieste, Italy

[7] Univ Modena & Reggio Emilia, Dipartimento Ingn Mat & Ambiente, I-41100 Modena, Italy

[8] CNISM, I-41100 Modena, Italy

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 23期

关键词：

adsorption; gallium arsenide; III-V semiconductors; photoelectron spectra; polaritons; GAAS-SURFACES; PHOTOEMISSION-SPECTROSCOPY; NITRIDATION; CHEMISTRY; PASSIVATION; NITROGEN; SULFUR; PLASMA; (111)A; GAN;

D O I：

10.1103/PhysRevB.80.233303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Chemical bonds formed by hydrazine-sulfide treatment of GaAs(111) were studied by synchrotron photoemission spectroscopy. At the B surface, the top arsenic atoms are replaced by nitrogen atoms, while GaAs(111)A is covered by sulfur, also bonded to underlying gallium, despite the sulfide molar concentration being 10(3) times smaller than that of the hydrazine. This extreme dependence on surface polarity is explained by competitive adsorption processes of HS- and OH- anions and of hydrazine molecules, on Ga-adsorption sites, which have distinct configurations on the A and B surfaces.

引用

页数：4

共 10 条

[1] Chemistry of Wet Treatment of GaAs(111)B and GaAs(111)A in Hydrazine-Sulfide Solutions
Berkovits, V. L.
Ulin, V. P.
Tereshchenko, O. E.
Paget, D.
Rowe, A. C. H.
Chiaradia, P.
Doyle, B. P.
Nannarone, S.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (03) : D127 - D135
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Berkovits, V. L.
Masson, L.
Makarenko, I. V.
Ulin, V. P.
APPLIED SURFACE SCIENCE, 2008, 254 (24) : 8023 - 8028
[3] A first-principles surface phase diagram study for Si-adsorption processes on GaAs(111)A surfaces
Akiyama, Toru
Tatematsu, Hiroaki
Nakamura, Kohji
Ito, Tomonori
SURFACE SCIENCE, 2010, 604 (02) : 171 - 174
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Sugawara, S
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (10A): : L1113 - L1115
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Ohtake, A
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APPLIED SURFACE SCIENCE, 2000, 162 : 419 - 424
[6] Polar surface dependence of epitaxy processes: ZnSe on GaAs{111}A, B-(2x2)
Ohtake, A
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Yasuda, T
Jin, CG
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APPLIED SURFACE SCIENCE, 1998, 130 : 398 - 402
[7] Preferential adsorption of gallium on GaAs(111)B surfaces during the initial growth of Au-assisted GaAs nanowires
Shu, Haibo
Chen, Xiaoshuang
Ding, Zongling
Dong, Ruibin
Lu, Wei
PHYSICS LETTERS A, 2010, 374 (31-32) : 3247 - 3253
[8] Investigation of substrate orientation dependence for the growth of GaN on GaAs (111)A and (111)B surfaces by metalorganic hydrogen chloride vapor-phase epitaxy
Kumagai, Y
Koukitu, A
Seki, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2000, 39 (2B): : L149 - L151
[9] A theoretical investigation of the potential for inter-surface migration of Ga adatoms between GaAs(001) and (111)B surfaces
Ito, T
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (5A): : L488 - L491
[10] Relating the coverage dependence of oxygen adsorption on Au and Pt fcc(111) surfaces through adsorbate-induced surface electronic structure effects
Miller, Spencer D.
Kitchin, John R.
SURFACE SCIENCE, 2009, 603 (05) : 794 - 801

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