First-principles modeling of defect-free abrupt SiC/SiO2 interfaces on a- and m-face 4H-SiC

被引：4

作者：

Kaneko, Tomoaki ^{[1
,2
]}

Tajima, Nobuo ^{[1
,2
]}

Yamasaki, Takahiro ^{[1
,2
]}

Nara, Jun ^{[1
,2
]}

Schimizu, Tatsuo ^{[3
]}

Kato, Koichi ^{[4
]}

Ohno, Takahisa ^{[1
,2
]}

机构：

[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, Japan

[2] Mat Res Consortium Energy Efficient Elect Devices, Tsukuba, Ibaraki 3050044, Japan

[3] Toshiba Co Ltd, Corporate R&D Ctr, Kawasaki, Kanagawa 2128582, Japan

[4] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

来源：

APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 10期

关键词：

DYNAMICS; MOBILITY;

D O I：

10.7567/APEX.11.101304

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

While the a- and m-faces of 4H-SiC have attracted increasing interest for SiC metal-oxide-semiconductor device applications, the electronic and/ or geometric structures of their SiC/SiO2 interfaces are still unknown. We constructed model structures of "defect-free" abrupt SiC/SiO2 interfaces. Even with C-O bonds at the interface and/or an uneven interfacial boundary, their electronic properties show only slight difference from those of the Si-face with a flat interface and no-interface C-O bonds. Our results offer a starting point for studying whether the smaller number of defects for a- and m-faces compared with the Si-face is related to the intrinsic properties of the interface or to oxidation processes. (C) 2018 The Japan Society of Applied Physics

引用

页数：4

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