Evidence of minority carrier injection efficiency >90% in an epitaxial graphene/SiC Schottky emitter bipolar junction phototransistor for ultraviolet detection

被引：20

作者：

Chava, Venkata S. N. ^{[1
]}

Omar, Sabih U. ^{[1
]}

Brown, Gabriel ^{[1
]}

Shetu, Shamaita S. ^{[1
]}

Andrews, J. ^{[1
]}

Sudarshan, T. S. ^{[1
]}

Chandrashekhar, M. V. S. ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 04期

基金：

美国国家科学基金会;

关键词：

HIGH-GAIN; PHOTODETECTORS; HETEROJUNCTION; CONTACT; VOLTAGE; GROWTH; FILMS;

D O I：

10.1063/1.4940385

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we report the UV detection characteristics of an epitaxial graphene (EG)/SiC based Schottky emitter bipolar phototransistor (SEPT) with EG on top as the transparent Schottky emitter layer. Under 0.43 mu W UV illumination, the device showed a maximum common emitter current gain of 113, when operated in the Schottky emitter mode. We argue that avalanche gain and photoconductive gain can be excluded, indicating minority carrier injection efficiency, gamma, as high as 99% at the EG/p-SiC Schottky junction. This high gamma is attributed to the large, highly asymmetric barrier, which EG forms with the p-SiC. The maximum responsivity of the UV phototransistor is estimated to be 7.1 A/W. The observed decrease in gain with increase in UV power is attributed to recombination in the base region, which reduces the minority carrier lifetime. (C) 2016 AIP Publishing LLC.

引用

页数：5

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