Influence of W substitution on crystal structure, phase evolution and microwave dielectric properties of (Na0.5Bi0.5)MoO4 ceramics with low sintering temperature

被引:23
|
作者
Pang, Li-Xia [1 ]
Zhou, Di [2 ,3 ,4 ]
Qi, Ze-Ming [5 ]
Yue, Zhen-Xing [6 ]
机构
[1] Xian Technol Univ, Microoptoelect Syst Labs, Xian 710032, Shaanxi, Peoples R China
[2] Xi An Jiao Tong Univ, Minist Educ, Key Lab, Elect Mat Res Lab, Xian 710049, Shaanxi, Peoples R China
[3] Xi An Jiao Tong Univ, Int Ctr Dielectr Res, Xian 710049, Shaanxi, Peoples R China
[4] Univ Sheffield, Dept Mat Sci & Engn, Sheffield S1 3JD, S Yorkshire, England
[5] Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230029, Anhui, Peoples R China
[6] Tsinghua Univ, Dept Mat Sci & Engn, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China
来源
SCIENTIFIC REPORTS | 2017年 / 7卷
基金
中国国家自然科学基金;
关键词
TETRAGONAL NABI(WO4)(2); SCHEELITE; NABI(MOO4)(2); LA2(MOO4)3; MOLYBDATES; RESONATOR; NEUTRON; SR; BA; CA;
D O I
10.1038/s41598-017-03620-0
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
In this work, the (Na0.5Bi0.5)(Mo1-xWx)O-4 (x = 0.0, 0.5 and 1.0) ceramics were prepared via solid state reaction method. All the samples can be well densified at sintering temperature about similar to 720 degrees C. Dense and homogeneous microstructure with grain size lying between 2 similar to 8 mu m can be observed from scanning electron microscopy (SEM). Microwave dielectric permittivity of the (Na0.5Bi0.5)(Mo0.5W0.5)O-4 ceramic was found to be temperature-independent in a wide range between 25 similar to 120 degrees C with a temperature coefficient of frequency (TCF) similar to-6 ppm/degrees C, a permittivity similar to 28.9, and Qf values 12,000 similar to 14,000 GHz. Crystal structure was refined using Rietveld method and lattice parameters are a = b = 5.281 (5) angstrom and c = 11.550 (6) angstrom with a space group I 4(1)/a (88). The (Na0.5Bi0.5)(Mo1-xWx)O-4 ceramics might be good candidate for low temperature co-fired ceramics (LTCC) technology.
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页数:6
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