X7R dielectrics for high energy density capacitors

被引:0
作者
Huebner, W [1 ]
Zhang, SC [1 ]
Pennell, M [1 ]
Ding, XM [1 ]
机构
[1] Univ Missouri, Dept Ceram Engn, Rolla, MO 65401 USA
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中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
This paper summarizes the results of a project dedicated towards the development of dielectrics for high energy density discharge capacitors. The primary goal was to produce capacitors with the following specifications: 1) the capacitors must fit within a space which is 1 x 1 x 0.020 "; 2) have at least 0.10 mu F over a temperature range -55 similar to 125 degrees C, at 1000 V; 3) are able to withstand voltage surges to 2000 V without failure; and 4) fast charge/discharge cycle (200 ms to 1000 V, then hold at the voltage for 2 min and discharge through a 150 m Omega resistor with a peak current 2000 A in 200 ns). Key factors to this project were the magnitude of the dielectric constant (K) at high field levels, and the breakdown strength (BDS). Studies on a commercially available X7R composition yielded a dielectric with a K = 920, and an average BDS = 250 kV/cm. Processing studies showed the dielectric could be lapped down to a thickness of 4 mils. Thermal annealing was necessary to retain the mechanical and electrical integrity. These boundary conditions forced the development of a multilayer capacitor instead of the originally conceived single layer capacitor.
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页码:S1793 / S1797
页数:5
相关论文
共 7 条
[1]  
BRIDGER K, 1992, IEEE 35 INT POW SOUR, P387
[2]   ENERGY STORAGE IN CERAMIC DIELECTRICS [J].
BURN, I ;
SMYTH, DM .
JOURNAL OF MATERIALS SCIENCE, 1972, 7 (03) :339-&
[3]  
GUPTA DK, 1992, FERROELECTRICS, V134, P71
[4]   ENERGY-STORAGE IN CERAMIC DIELECTRICS [J].
LOVE, GR .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1990, 73 (02) :323-328
[5]  
MAMMONE RJ, 1990, IEEE INT POW SOURC S, P395
[6]  
SHIRN GA, 1981, P S HIGH EN DENC CAP
[7]   EVALUATION OF HIGH-TEMPERATURE DIELECTRIC FILMS FOR HIGH-VOLTAGE POWER ELECTRONIC APPLICATIONS [J].
SUTHAR, JL ;
LAGHARI, JR .
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 1992, 3 (02) :77-81