A broadband microwave GaN HEMTs class EF3 power amplifier with π-type network

被引：7

作者：

Rong, Chuicai ^{[1
,2
]}

Liu, Xiansuo ^{[1
]}

Xu, Yuehang ^{[1
]}

Xia, Mingyao ^{[3
]}

Xu, Ruimin ^{[1
]}

Zhang, Tiedi ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Elect Engn, Chengdu 611731, Peoples R China

[2] Gannan Normal Univ, Sch Phys & Elect Informat, Ganzhou 341000, Jiangxi, Peoples R China

[3] Peking Univ, Sch Elect Engn & Comp Sci, Beijing 100871, Peoples R China

来源：

IEICE ELECTRONICS EXPRESS | 2017年 / 14卷 / 09期

基金：

中国国家自然科学基金;

关键词：

class EF3; power amplifier; GaN HEMT; pi-type network; DESIGN; MODEL;

D O I：

10.1587/elex.14.20170260

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A GaN HEMTs class EF3 power amplifier (PA) with p-type network for broadband operation is presented in this paper. The p-type network is constructed by shunt capacitance, series inductance and finite dc-feed inductance, where the series inductance includes the parasitic inductance effects of transistor. As a result, the topology can make full use of the parasitic effects of transistor to raise the operation frequency. Moreover, it is found that this topology can also increase the frequency bandwidth. For demonstration purpose, a PA prototype based on the topology is fabricated. Experimental results show that the amplifier can operate from 2.9 GHz to 4.0 GHz (fractional bandwidth 31.8%) with a measured drain efficiency higher than 67%, and the output power is greater than 37.4 dBm. The proposed structure can be a good candidate for design of high efficiency and broadband class E power amplifiers.

引用

页数：7

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