Low-temperature solution-processed InGaZnO thin film transistors by using lightwave-derived annealing

被引：10
作者：
Zhang, Qian [1 ]
Ruan, Cheng [1 ]
Xia, Guodong [2 ]
Gong, Hongyu [1 ]
Wang, Sumei [1 ]
机构：
[1] Shandong Univ, Key Lab Liquid Solid Struct Evolut & Proc Mat, Minist Educ, Jinan 250061, Peoples R China
[2] Qilu Univ Technol, Dept Mat & Engn, Shandong Acad Sci, Jinan 250353, Peoples R China
来源：
THIN SOLID FILMS | 2021年 / 723卷
关键词：
Solution process; Low temperature; Lightwave annealing; Thin-film transistor; LOW-VOLTAGE; FABRICATION; STABILITY; BIAS;
D O I：
10.1016/j.tsf.2021.138594
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, a lightwave-derived low-temperature annealing method is demonstrated on solution-processed InGaZnO (IGZO) films for the flexible thin film transistors (TFTs) applications. It is demonstrated that lightwave-derived low-temperature annealing (similar to 230 degrees C) enhances the IGZO TFTs performance. Compared with the conventional furnace annealing process, lightwave annealing can effectively facilitate the decomposition of the IGZO precursors and form a smooth and dense IGZO film. With AlOx used as a dielectric layer, the optimal IGZO TFTs exhibit the carrier mobility of 13.4 cm(2)/Vs and a high on-current to off-current ratio (I-on/I-off) of > 10(5). This work indicates that lightwave annealing is a practical approach to fabricate the oxide semiconductors at a low annealing temperature and show great potential for the next-generation low-cost wearable device fabrication.
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页数：7
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