Anharmonic linewidth of absorption by localized vibrations of H and D adatoms on the surface of Si

被引：1

作者：

Ipatova, IP ^{[1
]}

Chikalova-Luzina, OP

Hess, K

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] Univ Illinois, Beckman Inst, Urbana, IL 61801 USA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2000年 / 27卷 / 5-6期

基金：

俄罗斯基础研究基金会; 美国国家科学基金会;

关键词：

D O I：

10.1006/spmi.2000.0858

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The integrated infrared radiation (IR) absorption is measured using stretching localized vibrations of hydrogen adatoms on the silicon(111) surface. It is found that the line intensity decreases as the temperature increases. The anomalous temperature dependence is due to a strong anharmonic interaction of the H-Si stretching modes with H-Si bending modes.

引用

页码：437 / 439

页数：3

共 6 条

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