Nano metal particles for low temperature interconnect technology

被引：9

作者：

Moon, KS ^{[1
]}

Dong, H ^{[1
]}

Pothukuchi, S ^{[1
]}

Li, Y ^{[1
]}

Wong, CP ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

来源：

54TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | 2004年

关键词：

D O I：

10.1109/ECTC.2004.1320399

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For low temperature interconnects, melting point (T-m) depression and sintering behavior of metal nano particles are investigated. Nano Ag particles used (similar to20 nm) exhibited obvious sintering behavior, rather than typical melting behavior, at significantly lower temperatures (similar to150 degreesC) than its T-m (1235 degreesC). The particle surface was characterized by XPS, FTIR and TGA. The thermal behavior was studied by DSC and TGA. The crystal structure of the particle was examined by XRD. The shrinkage of the nano particles during sintering was monitored by TMA. Sintering behavior of the nano particles is discussed.

引用

页码：1983 / 1988

页数：6

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