Compact electron-based EUV source for at-wavelength metrology

被引：13

作者：

Egbert, A ^{[1
]}

Tkachenko, B ^{[1
]}

Becker, S ^{[1
]}

Chichkov, BN ^{[1
]}

机构：

[1] Phoenix Euv Syst & Serv GmbH, D-31515 Wunstorf, Germany

来源：

HIGH-POWER LASER ABLATION V, PTS 1 AND 2 | 2004年 / 5448卷

关键词：

extreme ultraviolet source; EUV lithography; EUV metrology;

D O I：

10.1117/12.547029

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A compact electron-based extreme ultraviolet (EUV) source for at-wavelength metrology is developed. The source concept is based on the transfer of advanced microfocus x-ray tube technology into the EUV spectral range. This allows the realization of a flexible, debris-free, and long-term stable EUV source. In the EUV tube, silicon targets are used to generate radiation at 13.5 nm. Detailed characteristics of the source performance are reported and different applications of the EUV tube in the field of at-wavelength metrology are presented.

引用

页码：693 / 703

页数：11

共 5 条

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JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS, 2003, 2 (02) :136-139

[2]

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[5] Metrology tools for EUVL-source characterization and optimization [J].

Schürmann, MC ;

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Lebert, R ;

Juschkin, L .

EMERGING LITHOGRAPHIC TECHNOLOGIES VII, PTS 1 AND 2, 2003, 5037 :378-388

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