Analysis of Hall Voltage in Micro Poly-Si Hall Cells

被引：21

作者：

Kimura, Mutsumi ^{[1
,2
]}

Yamaguchi, Yohei ^{[1
]}

Hashimoto, Hayami ^{[1
]}

Hirako, Masaaki ^{[1
]}

Yamaoka, Toshifumi ^{[1
]}

Tani, Satoshi ^{[1
]}

机构：

[1] Ryukoku Univ, Dept Elect & Informat, Otsu, Shiga 5202194, Japan

[2] Ryukoku Univ, Innovat Mat & Proc Res Ctr, Otsu, Shiga 5202194, Japan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2010年 / 13卷 / 08期

关键词：

elemental semiconductors; Hall effect; Hall effect devices; magnetic sensors; semiconductor devices; semiconductor thin films; silicon; POLYCRYSTALLINE SILICON FILMS; TFTS; TRANSISTOR; MOBILITY; DISPLAY;

D O I：

10.1149/1.3436663

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Hall voltage in micro poly-Si Hall cells is evaluated to analyze the Hall effect in poly-Si films and investigate the possibility of magnetic sensors. Normal Hall effect occurs, but the Hall voltage has an offset voltage even when magnetic field is zero, whereas the change in the Hall voltage is proportional to the magnetic field. The offset voltage is caused by the control current flows through zigzag paths due to the random location of polycrystalline grains. These results mean that material evaluation based on the Hall effect is also available for poly-Si films and suggest the possibility of area sensors. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3436663] All rights reserved.

引用

页码：J96 / J98

页数：3

共 22 条

[1] INTERPRETATION OF HALL AND RESISTIVITY MEASUREMENTS IN POLYCRYSTALLINE SILICON [J].

GHOSH, AK ;

ROSE, A ;

MARUSKA, HP ;

FENG, T ;

EUSTACE, DJ .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (02) :237-260

[2]

HATANO M, 1997, 4 INT WORKSH ACT MAT, P95

[3] High-resolution microencapsulated electrophoretic display (EPD) driven by poly-Si TFTs with four-level grayscale [J].

Inoue, S ;

Kawai, H ;

Kanbe, S ;

Saeki, T ;

Shimoda, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (09) :1532-1539

[4]

Inoue S., 1991, 1991 INT EL DEV M, P555

[5] HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J].

KAMINS, TI .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4357-&

[6] Optical absorption and Hall effect in (220) and (400) oriented polycrystalline silicon films [J].

Kamiya, T ;

Nakahata, K ;

Sameshima, T ;

Watanabe, T ;

Mouri, T ;

Shimizu, I .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (06) :3310-3315

[7]

Karaki N., 2005, 2005 IEEE International Solid-State Circuits Conference (IEEE Cat. No. 05CH37636), P272

[8] Low-temperature polysilicon thin-film transistor driving with integrated driver for high-resolution light emitting polymer display [J].

Kimura, M ;

Yudasaka, I ;

Kanbe, S ;

Kobayashi, H ;

Kiguchi, H ;

Seki, S ;

Miyashita, S ;

Shimoda, T ;

Ozawa, T ;

Kitawada, K ;

Nakazawa, T ;

Miyazawa, W ;

Ohshima, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (12) :2282-2288

[9] Current paths over grain boundaries in polycrystalline silicon films [J].

Kimura, M ;

Inoue, S ;

Shimoda, T ;

Sameshima, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (2A) :L97-L99

[10]

KOIDE S, 2006, 13 INT DISPL WORKSH, P689

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