Current-transport mechanisms of isotype n-ZnO/n-GaN heterostructures

被引：0

作者：

Alivov, Ya. I. ^{[1
]}

Bo, X. ^{[1
]}

Fan, Q. ^{[1
]}

Akarca-Biyikli, S. ^{[1
]}

Johnstone, D. ^{[2
]}

Lopatiuk, O. ^{[3
]}

Chernyak, L. ^{[3
]}

Litton, C. W. ^{[4
]}

Morkoc, H. ^{[1
]}

机构：

[1] Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA 23284 USA

[2] SEMETROL, Chesterfield, VA 23838 USA

[3] Univ Cent Florida, Phys Dept, Orlando, FL 32816 USA

[4] US Air Force, Res Lab, AFRL MLPS, Wright Patterson AFB, OH USA

来源：

ZINC OXIDE MATERIALS AND DEVICES II | 2007年 / 6474卷

关键词：

ZnO; GaN; heterojunction; current-voltage characteristics; EBIC;

D O I：

10.1117/12.706300

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Electrical properties of n-ZnO/n-GaN isotype heterostructures prepared by rf-sputtering of ZnO films on GaN layers which in turn grown by metal-organic vapour phase epitaxy are discussed. Current-voltage (I-V) characteristics of the nZnO/n-GaN diodes exhibited highly rectifying characteristics with forward and reverse currents being similar to 1.43x10(-2) A/cm(2) and similar to 2.4x10(4) A/cm(2), respectively, at 5 V. From the Arrhenius plot built representing the temperature dependent cuffent-voltage characteristics (I-V-T) an activation energy 0.125 eV was derived for the reverse bias leakage current path, and 0.62 eV for the band offset from forward bias measurements. From electron-beam induced current measurements and depending on excitation conditions the minority carrier diffusion length in ZnO was estimated in the range 0.125-0.175 mu m,. The temperature dependent EBIC measurements yielded an activation energy of 0.4621 +/- 0.073 V.

引用

页数：5

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