All-Electrical High-Sensitivity, Low-Power Dual-Mode Gas Sensing and Recovery with a WSe2/MoS2 pn Heterodiode

Two-dimensional MoS2 gas sensors have conventionally relied on a change in field-effect-transistor (FET) channel resistance or in the Schottky contact/pn homojunction barrier. We demonstrate an enhancement in sensitivity (6x) and dynamic response along with a reduction in detection limit (8x) and power (10(4)x) in a gate-tunable type-II WSe2(p)/MoS2(n) heterodiode gas sensor over an MoS2 FET on the same flake. Measurements for varying NO2 concentration, gate bias, and MoS2 flake thickness, reinforced with first-principles calculations, indicate dual-mode operation due to (i) a series resistance-based exponential change in the high-bias thermionic current (high sensitivity), and (ii) a heterointerface carrier concentration-based linear change in near-zero-bias interlayer recombination current (low power) resulting in sub-100 mu W/cm(2) power consumption. Fast and gate-bias tunable recovery enables an all-electrical, room-temperature dynamic operation. Coupled with the sensing of trinitrotoluene (TNT) molecules down to 80 ppb, this study highlights the potential of the WSe2/MoS2 pn heterojunction as a simple, low-overhead, and versatile chemical-sensing platform.