Growth of Wrinkle-Free Graphene on Texture-Controlled Platinum Films and Thermal-Assisted Transfer of Large-Scale Patterned Graphene

被引:60
作者
Choi, Jae-Kyung [1 ]
Kwak, Jinsung [1 ]
Park, Soon-Dong [2 ]
Yun, Hyung Duk [1 ]
Kim, Se-Yang [1 ]
Jung, Minbok [1 ]
Kim, Sung Youb [2 ]
Park, Kibog [3 ]
Kang, Seoktae [4 ]
Kim, Sung-Dae [5 ]
Park, Dong-Yeon [6 ]
Lee, Dong-Su [6 ]
Hong, Suk-Kyoung [6 ]
Shin, Hyung-Joon [1 ]
Kwon, Soon-Yong [1 ,2 ]
机构
[1] UNIST, Sch Mat Sci & Engn, Ulsan 689798, South Korea
[2] UNIST, Sch Mech & Nucl Engn, Ulsan 689798, South Korea
[3] UNIST, Dept Phys, Ulsan 689798, South Korea
[4] Kyung Hee Univ, Dept Civil Engn, Gyeonggi 446701, South Korea
[5] Korea Inst Mat Sci, Adv Characterizat & Anal Grp, Chang Won 642831, South Korea
[6] GMEK Inc, Gyeonggi 431767, South Korea
基金
新加坡国家研究基金会;
关键词
wrinkle-free graphene; patterned graphene; thermal-assisted transfer; chemical vapor deposition; texture-controlled platinum; CHEMICAL-VAPOR-DEPOSITION; FEW-LAYER GRAPHENE; PREFERRED ORIENTATION; HIGH-QUALITY; THIN-FILMS; SURFACE; GRAINS; OXYGEN; SIZE;
D O I
10.1021/nn5060909
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Growth of large-scale patterned, wrinkle-free graphene and the gentle transfer technique without further damage are most important requirements for the practical use of graphene. Here we report the growth of wrinkle-free, strictly uniform monolayer graphene films by chemical vapor deposition on a platinum (Pt) substrate with texture-controlled giant grains and the thermal-assisted transfer of large-scale patterned graphene onto arbitrary substrates. The designed Pt surfaces with limited numbers of grain boundaries and improved surface perfectness as well as small thermal expansion coefficient difference to graphene provide a venue for uniform growth of monolayer graphene with wrinkle-free characteristic. The thermal-assisted transfer technique allows the complete transfer of large-scale patterned graphene films onto arbitrary substrates without any ripples, tears, or folds. The transferred graphene shows high crystalline quality with an average carrier mobility of similar to 5500 cm(2) V-1 s(-1) at room temperature. Furthermore, this transfer technique shows a high tolerance to variations in types and morphologies of underlying substrates.
引用
收藏
页码:679 / 686
页数:8
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