Electroless plating of copper and nickel via a Sn-free process on dielectric SiLK® surface

被引:0
作者
Yu, WH [1 ]
Kang, ET [1 ]
Neoh, KG [1 ]
Zhang, Y [1 ]
Ang, SS [1 ]
Tay, AAO [1 ]
机构
[1] Natl Univ Singapore, Dept Chem Engn, Singapore 119260, Singapore
来源
PROCEEDINGS OF THE 4TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE (EPTC 2002) | 2002年
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中图分类号
O414.1 [热力学];
学科分类号
摘要
Electroless plating of copper and nickel via a one-step, Sn-free activation process was carried out effectively on the SiLK(R) coating on (100)-oriented silicon wafer (SiLK-Si substrate) modified by UV-induced surface graft copolymerization with several N-containing vinyl monomers, including 1-vinylilidazole (VIDz), 2-vinylpyridine (2VP), and 4-vinylpyridine (4VP). The chemical composition and topography of the graft-copolymerized SiLK-Si surfaces were characterized by Xray photoelectron spectroscopy (XPS) and AFM. respectively. The VIDz, 2VP, and 4VP graft-copolymerized SiLK-Si surfaces could be directly activated by PdCl2 in the absence of prior sensitization by a tin compound, such as SnCl2, (the Sn-free activation process) for the subsequent electroless deposition of copper and nickel. The Sn-free process involved initially the chemisorption of palladium, in the complex form, on the pyridine or imidazole group of the graft polymer. The 180degrees-peel adhesion strength of the electrolessly deposited copper and nickel with the VIDz, 2VP, and 4VP graft-copolymerized SiLK-Si surfaces were much higher than that of the electrolessly deposited copper and nickel with the pristine or the Ar plasma-treated SiLK-Si surfaces.
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页码:428 / 433
页数:6
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