Adhesion at diamond/metal interfaces: A density functional theory study

被引:42
作者
Guo, Haibo [2 ]
Qi, Yue [1 ]
Li, Xiaodong [2 ]
机构
[1] Gen Motors R&D Ctr, Mat & Proc Lab, Warren, MI 48090 USA
[2] Univ S Carolina, Dept Mech Engn, Columbia, SC 29208 USA
关键词
adhesion; aluminium; coatings; copper; density functional theory; diamond; enthalpy; fracture; surface energy; titanium; THIN-FILMS; ELECTRON LOCALIZATION; SURFACE-ENERGY; 1ST PRINCIPLES; CU; GROWTH; DEPOSITION; HYDROGEN; COPPER; THERMODYNAMICS;
D O I
10.1063/1.3277013
中图分类号
O59 [应用物理学];
学科分类号
摘要
To understand the basic material properties required in selecting a metallic interlayer for enhanced adhesion of diamond coatings on the substrates, the interfaces between diamond and metals with different carbide formation enthalpies (Cu, Ti, and Al) are studied using density functional theory. It is found that the work of separation decreases, while the interface energy increases, with the carbide formation enthalpy Delta H-f (Ti < Al < Cu). By comparing the work of separation at the interface with the work of decohesion of the metal, we found that the fracture is more likely to initiate in the metal phase near the interface; therefore a metal phase with a larger surface energy, gamma(s) (Ti>Cu>Al), is needed to achieve a higher overall interface strength. In addition, when the surface energy is larger than the interface energy, a wetted diamond/metal interface is formed during diamond nucleation, providing the strongest adhesion compared to other growth modes. These results indicate that a strong carbide-forming ability and a large surface energy of the interlayer promote nucleation and enhance the adhesion and interface strength of the coating/substrate system.
引用
收藏
页数:8
相关论文
共 52 条
[1]   ANALYSIS OF CRITICAL DEBONDING PRESSURES OF STRESSED THIN-FILMS IN THE BLISTER TEST [J].
ALLEN, MG ;
SENTURIA, SD .
JOURNAL OF ADHESION, 1988, 25 (04) :303-315
[2]  
[Anonymous], 1989, COHESION METALS TRAN
[3]   Materials science and fabrication processes for a new MEMS technoloey based on ultrananocrystalline diamond thin films [J].
Auciello, O ;
Birrell, J ;
Carlisle, JA ;
Gerbi, JE ;
Xiao, XC ;
Peng, B ;
Espinosa, HD .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (16) :R539-R552
[4]   Measurements of the debond energy for thin metallization lines on dielectrics [J].
Bagchi, A ;
Evans, AG .
THIN SOLID FILMS, 1996, 286 (1-2) :203-212
[5]   Unlocking diamond's potential as an electronic material [J].
Balmer, R. S. ;
Friel, I. ;
Woollard, S. M. ;
Wort, C. J. H. ;
Scarsbrook, G. A. ;
Coe, S. E. ;
El-Hajj, H. ;
Kaiser, A. ;
Denisenko, A. ;
Kohn, E. ;
Isberg, J. .
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 2008, 366 (1863) :251-265
[6]   Equilibrium and adhesion of Nb/sapphire: The effect of oxygen partial pressure [J].
Batyrev, IG ;
Alavi, A ;
Finnis, MW .
PHYSICAL REVIEW B, 2000, 62 (07) :4698-4706
[7]   EPITAXIAL CU CONTACTS ON SEMICONDUCTING DIAMOND [J].
BAUMANN, PK ;
HUMPHREYS, TP ;
NEMANICH, RJ ;
ISHIBASHI, K ;
PARIKH, NR ;
PORTER, LM ;
DAVIS, RF .
DIAMOND AND RELATED MATERIALS, 1994, 3 (4-6) :883-886
[8]   Characterization of copper-diamond (100), (111), and (110) interfaces: Electron affinity and Schottky barrier [J].
Baumann, PK ;
Nemanich, RJ .
PHYSICAL REVIEW B, 1998, 58 (03) :1643-1654
[9]   A SIMPLE MEASURE OF ELECTRON LOCALIZATION IN ATOMIC AND MOLECULAR-SYSTEMS [J].
BECKE, AD ;
EDGECOMBE, KE .
JOURNAL OF CHEMICAL PHYSICS, 1990, 92 (09) :5397-5403
[10]  
BROTZEN FR, 1994, INT MATER REV, V39, P24, DOI 10.1179/095066094790150973