Shubnikov-de Haas and Aharonov Bohm effects in a graphene nanoring structure

被引：20

作者：

Yoo, Jai Seung ^{[1
]}

Park, Yung Woo ^{[1
]}

Skakalova, Viera ^{[2
]}

Roth, Siegmar ^{[2
,3
]}

机构：

[1] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea

[2] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[3] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 14期

关键词：

Aharonov-Bohm effect; electronic density of states; graphene; Landau levels; magnetoresistance; nanostructured materials; QUANTUM; CARBON;

D O I：

10.1063/1.3380616

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We observed the Shubnikov-de Haas and the Aharonov Bohm oscillations in a graphene nanoring structure of 1 mu m in diameter and with a 125 nm channel width. We found a separation of 2 Delta V-g=17.5 V between electron and hole Landau levels in the plot of longitudinal resistance as a function of gate voltage and magnetic field. This separation can be understood as a result of the transport gap, Delta V-t=20 V, in the density of state. The Aharonov Bohm effect was observed in magnetoconductance with poor visibility because of the short phase coherence length of the graphene nanoring structure.

引用

页数：3

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