Understanding the metal-oxides induced reduction of the contact resistance in organic transistors

被引：3

作者：

Donnhaeuser, Shabnam ^{[1
]}

Minagawa, Masahiro ^{[3
,4
]}

Blawid, Stefan ^{[5
]}

Claus, Martin ^{[1
,2
,4
]}

机构：

[1] Tech Univ Dresden, Chair Electron Devices & Integrated Circuits, Dresden, Germany

[2] Tech Univ Dresden, Ctr Adv Elect Dresden, Dresden, Germany

[3] Nagaoka Natl Coll Technol, Dept Elect Control Engn, Niigata, Japan

[4] Stanford Univ, Dept Chem Engn, 443 Via Ortega, Stanford, CA 94305 USA

[5] Univ Brasilia, Dept Elect Engn, BR-70910900 Brasilia, DF, Brazil

来源：

SOLID-STATE ELECTRONICS | 2020年 / 163卷

基金：

日本学术振兴会;

关键词：

Organic thin-film transistors; Electrode oxidization; Contact resistance; Transfer length; Charge-transfer and contact mobility; FIELD-EFFECT TRANSISTORS; CHARGE INJECTION; HIGH-PERFORMANCE; PENTACENE;

D O I：

10.1016/j.sse.2019.107676

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is well known that inserting metal oxides on top of electrodes in coplanar bottom-gate bottom-contact organic field-effect transistors (OFETs) improves the OFET performance in terms of increased current density, higher effective mobility and reduced contact resistance. This elucidates the transistor performance gain in case of oxidized metal electrodes using numerical device simulations and experimental data. The study strongly supports the hypothesis that the impact of oxidization can be explained for these experiments by an improvement of the semiconductor morphology in the vicinity of oxidized electrodes in conjunction with an improved mobility in these regions.

引用

页数：7

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