-1 V bias 67 GHz bandwidth Si-contacted germanium waveguide p-i-n photodetector for optical links at 56 Gbps and beyond

被引：177

作者：

Chen, H. ^{[1
,2
]}

Verheyen, P. ^{[1
]}

De Heyn, P. ^{[1
]}

Lepage, G. ^{[1
]}

De Coster, J. ^{[1
]}

Balakrishnan, S. ^{[1
]}

Absil, P. ^{[1
]}

Yao, W. ^{[3
]}

Shen, L. ^{[3
]}

Roelkens, G. ^{[2
]}

Van Campenhout, J. ^{[1
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

[2] Univ Ghent, IMEC, Dept Informat Technol, Photon Res Grp, B-9000 Ghent, Belgium

[3] Eindhoven Univ Technol, Photon Integrat Grp, POB 513, NL-5600 MB Eindhoven, Netherlands

来源：

OPTICS EXPRESS | 2016年 / 24卷 / 05期

关键词：

SILICON; GE; PHOTODIODE;

D O I：

10.1364/OE.24.004622

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate a 67 GHz bandwidth silicon-contacted germanium waveguide p-i-n photodetector operating at -1 V with 6.8 fF capacitance. The dark current is below 4 nA. The responsivity is 0.74 A/W at 1550 nm and 0.93 A/W at 1310 nm wavelength. 56 Gbps on-off-keying data reception is demonstrated with clear open eye diagrams in both the Cband and O-band. (C) 2016 Optical Society of America

引用

页码：4622 / 4631

页数：10

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