Electronic properties of atomically abrupt tunnel junctions in silicon

被引：30

作者：

Ruess, F. J. ^{[1
]}

Pok, W.

Goh, K. E. J.

Hamilton, A. R.

Simmons, M. Y.

机构：

[1] Australian Res Council, Ctr Excellence Quantum Comp Technol, Sydney, NSW 2052, Australia

[2] Univ New S Wales, Sch Phys, Sydney, NSW 2052, Australia

来源：

PHYSICAL REVIEW B | 2007年 / 75卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.75.121303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We explore the influence of atomically sharp phosphorus doping profiles in laterally patterned tunnel junctions in crystalline silicon on the electronic transport properties at low temperatures. Atomically precise patterning is realized using scanning-tunneling-microscope-based hydrogen lithography in combination with low-temperature Si growth by molecular beam epitaxy. We show the conductance modulation of a 48-nm tunnel gap with a barrier height of 0.5 meV and highlight how such devices can act as sensitive charge sensors.

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