W-Band LNA MMICs Based on a Noise-Optimized 50-nm Gate-Length Metamorphic HEMT Technology

被引：20

作者：

Thome, Fabian ^{[1
]}

Leuther, Arnulf ^{[1
]}

Heinz, Felix ^{[1
]}

Ambacher, Oliver ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys IAF, D-79108 Freiburg, Germany

来源：

2019 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2019年

关键词：

Balanced amplifiers; high-electron-mobility transistors (HEMTs); low-noise amplifiers (LNAs); millimeter-wave integrated circuits (MMICs); E-band; W-band;

D O I：

10.1109/mwsym.2019.8700792

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the design, analysis, and room-temperature performance of two W-band LNA MMICs fabricated in two different technology variations are presented. The investigation demonstrates the noise improvement of the given 50-nm gate-length InGaAs mHEMT technology with reduced necessary drain currents. Therefore, a single-ended and balanced W-band LNA MMIC were designed, fabricated, and characterized. The amplifiers exhibit state-of-the-art noise temperatures with an average value for the single-ended LNA of 159K (1.9 dB) with lowest values of 132K (1.6 dB). Due to the technology investigation it was possible to reduce the noise temperature by about 15K compared to the reference technology in combination with superior MMIC yield.

引用

页码：168 / 171

页数：4

共 14 条

[1] Comparison of a 35-nm and a 50-nm Gate-Length Metamorphic HEMT Technology for Millimeter-Wave Low-Noise Amplifier MMICs
Thome, Fabian
Leuther, Arnulf
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Schlechtweg, Michael
Ambacher, Oliver
2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2017, : 748 - 751
[2] A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation
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IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2021, 69 (08) : 3896 - 3907
[3] A W-Band Low-Noise Amplifier in 50-nm InP HEMT Technology
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Park, Wan-Soo
Jo, Hyeon-Bin
Choi, Su-Min
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Kim, Sang-Kuk
Yun, Jacob
Kim, Ted
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2023 IEEE TEXAS SYMPOSIUM ON WIRELESS AND MICROWAVE CIRCUITS AND SYSTEMS, WMCS, 2023,
[4] A Wideband E/W-Band Low-Noise Amplifier MMIC in a 70-nm Gate-Length GaN HEMT Technology
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Quay, Ruediger
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[5] A 50-nm Gate-Length Metamorphic HEMT Distributed Power Amplifier MMIC Based on Stacked-HEMT Unit Cells
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Ambacher, Oliver
2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2017, : 1695 - 1698
[6] W-Band SPDT Switches in Planar and Tri-Gate 100-nm Gate-Length GaN-HEMT Technology
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Ture, Erdin
Brueckner, Peter
Quay, Ruediger
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2018 11TH GERMAN MICROWAVE CONFERENCE (GEMIC 2018), 2018, : 331 - 334
[7] 70-116-GHz LNAs in 35-nm and 50-nm Gate-Length Metamorphic HEMT Technologies for Cryogenic and Room-Temperature Operation
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Leuther, Arnulf
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2018 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM - IMS, 2018, : 1495 - 1498
[8] A 67-116-GHz Cryogenic Low-Noise Amplifier in a 50-nm InGaAs Metamorphic HEMT Technology
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Tuerk, Sener
Yagoubov, Pavel
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[9] Asymmetrically recessed 50-nm gate-length metamorphic high electron-mobility transistor with enhanced gain performance
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Kong, Wendell M. T.
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Pleasant, L. Mt.
Schmanski, B.
Duh, K. H. G.
Karimy, H.
InTmorlica, A.
Komiak, J. J.
IEEE ELECTRON DEVICE LETTERS, 2008, 29 (01) : 4 - 7
[10] A Broadband 70-110-GHz E-/W-Band LNA Using a 90-nm T-Gate GaN HEMT Technology
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