Polarization-independent almost-perfect absorber controlled from narrowband to broadband

被引:20
作者
Chen, Junming [1 ,2 ]
Jin, Yunxia [1 ]
Chen, Peng [1 ,2 ]
Shan, Yao [1 ,2 ]
Xu, Jiao [1 ,2 ]
Kong, Fanyu [1 ]
Shao, Jianda [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
基金
中国国家自然科学基金;
关键词
TOTAL ABSORPTION; SEMICONDUCTOR GRATINGS; SURFACE-PLASMON; VISIBLE-LIGHT; FORMULATION; THIN;
D O I
10.1364/OE.25.013916
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Achieving perfect absorption and controlling the absorption bandwidth are highly desirable for many applications. In this Work, we design a narrowband almost-perfect absorber by using a metal-insulator-metal thin-film stack with absorption up to 99.671% at 0.58 mu m incident Wavelength. The peak of absorption can be totally controlled by adjusting the thickness of the insulator layer. When the top metal layer is patterned by crossed grating nanostructure with optimized parameters, the absorber becomes broadband over 150nm bandwidth with average absorption exceeding 97% from 0.5 mu m to 0.65 mu m in the visible region. Both the narrowband and broadband absorbers are independent on polarization in specific incident angle range. This work opens up a promising new approach to control bandwidth of perfect absorption, which implicates many potential applications. (C) 2017 Optical Society of America
引用
收藏
页码:13916 / 13922
页数:7
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