405nm ultraviolet photodetector based on tungsten disulphide thin film grown by drop casting method

被引：7

作者：

Ahmad, Harith ^{[1
,2
]}

Rashid, Haroon ^{[1
]}

机构：

[1] Univ Malaya, Photon Res Ctr, Kuala Lumpur 50603, Malaysia

[2] Univ Malaya, Fac Sci, Dept Phys, Kuala Lumpur 50603, Malaysia

来源：

JOURNAL OF MODERN OPTICS | 2019年 / 66卷 / 18期

关键词：

WS2; photodetector; UV; responsivity; fall time; drop-casting; GRAPHENE; MOS2;

D O I：

10.1080/09500340.2019.1682207

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this work, a tungsten disulphide or WS2 based heterojunction photodetector device is fabricated on top of Si substrate by simple drop casting. Raman shifts are observed at 350.16 and 419.36cm(-1), confirming the successful growth of the WS2 and the non-stoichiometric WS2 layers which are verified by energy-dispersive X-ray (EDX) spectroscopy. The device is characterized for its optoelectronic properties in the ultraviolet (UV) range of 405nm. Current-voltage (I-V) measurement is performed to obtain the I-V curves of the photodiode under laser illumination at 30.219, 56.335, 80.457, 106.998 and 129.28mW.cm(-2). The photocurrent is found to be highly dependent on the laser power. The fabricated device has a high responsivity of 145.52mA/W and a high detectivity of 1.248x10(11) Jones for an incident laser power density of 129.28mW.cm(-2). These observed results are promising and indicate the viability of the proposed design for optoelectronic applications.

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页码：1836 / 1840

页数：5

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