Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy

被引：19

作者：

Baeumler, Martina ^{[1
]}

Guetle, Frank ^{[1
]}

Polyakov, Vladimir ^{[1
]}

Caesar, Markus ^{[1
]}

Dammann, Michael ^{[1
]}

Konstanzer, Helmer ^{[1
]}

Pletschen, Wilfried ^{[1
]}

Bronner, Wolfgang ^{[1
]}

Quay, Ruediger ^{[1
]}

Waltereit, Patrick ^{[1
]}

Mikulla, Michael ^{[1
]}

Ambacher, Oliver ^{[1
]}

Bourgeois, Franck ^{[2
]}

Behtash, Reza ^{[2
]}

Riepe, Klaus J. ^{[2
]}

van der Wel, Paul J. ^{[3
]}

Klappe, Jos ^{[3
]}

Rodle, Thomas ^{[3
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

[2] United Monolith Semicond, D-89081 Ulm, Germany

[3] NXP Semicond, NL-6534 AE Nijmegen, Netherlands

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2010年 / 39卷 / 06期

关键词：

Electroluminescence microscopy; AlGaN/GaN HEMT; leakage current;

D O I：

10.1007/s11664-010-1120-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Results from on-wafer electroluminescence (EL) microscopy on AlGaN/GaN high-electron-mobility transistors with leakage currents varying over four orders of magnitude are presented. In the off-state region the integrated EL intensity is proportional to the leakage current and independent of gate width for the devices under study. The slope of the integrated EL-leakage current dependence is determined by the electrical field in the source-drain direction. The influence of the GaN cap thickness is small or even negligible for higher drain bias. Stress during accelerated aging results in enhanced degradation for areas of enhanced leakage current and/or electric field values.

引用

页码：756 / 760

页数：5

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