Fabrication of Mg2Sn(111) film by molecular beam epitaxy

被引：10

作者：

Aizawa, Takashi ^{[1
,2
]}

Ohkubo, Isao ^{[1
,2
]}

Lima, Mariana S. L. ^{[1
,2
,3
]}

Sakurai, Takeaki ^{[3
]}

Mori, Takao ^{[1
,2
]}

机构：

[1] Natl Inst Mat Sci, MANA, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

[2] Natl Inst Mat Sci, CFNS, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

[3] Univ Tsukuba, Inst Appl Phys, 1-1-1 Tennodai, Tsukuba, Ibaraki 3058577, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2019年 / 37卷 / 06期

关键词：

THIN-FILMS; MG2SI FILMS; GROWTH; GE; SN;

D O I：

10.1116/1.5122844

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Magnesium stannide (Mg2Sn) is a small bandgap semiconductor of interest as a promising thermoelectric or optoelectronic material. Thin films of Mg2Sn were epitaxially grown on sapphire (0001) surfaces using molecular beam epitaxy. The epitaxial relationship is (111)(Mg2Sn) parallel to (0001)(Al2O3) and [11 (2) over bar](Mg2Sn) parallel to [10 (1) over bar0](Al2O3), with a small amount of stacking faults. A relatively high growth rate of 0.21-0.27 nm/s was attainable. (C) 2019 Author(s).

引用

页数：5

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