Light-Induced-Degradation effects in boron-phosphorus compensated n-type Czochralski silicon

被引：55
|
作者：
Schutz-Kuchly, T. [1 ]
Veirman, J. [1 ]
Dubois, S. [1 ]
Heslinga, D. R. [1 ]
机构：
[1] CEA, LITEN, INES, F-73377 Le Bourget Du Lac, France
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 09期
关键词：
boron; carrier lifetime; doping profiles; elemental semiconductors; phosphorus; photovoltaic effects; semiconductor doping; silicon;
D O I：
10.1063/1.3334724
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This letter focuses on the evolution under illumination of the carrier lifetime in n-type boron-phosphorus compensated Czochralski silicon. Our results show a Light-Induced-Degradation (LID) of the carrier lifetime which we prove to be related to additional boron. The activation energy of the annihilation mechanism for this boron-related defect was found to be 1.7 eV, in agreement with values concerning the annihilation of the BOi2 complex responsible for the LID of boron-doped p-type silicon. This strongly suggests that BOi2 are also responsible for the degradation of n-type boron-phosphorus compensated silicon unlike what was expected from previous studies on compensated p-type silicon.
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