Two-dimensional semiconductors with possible high room temperature mobility

被引：695

作者：

Zhang, Wenxu ^{[1
]}

Huang, Zhishuo ^{[1
]}

Zhang, Wanli ^{[1
]}

Li, Yanrong ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

NANO RESEARCH | 2014年 / 7卷 / 12期

基金：

对外科技合作项目（国际科技项目）;

关键词：

electron mobility; acoustic phonon; ab initio; two-dimensional (2D) materials; TRANSITION;

D O I：

10.1007/s12274-014-0532-x

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have calculated the longitudinal acoustic phonon limited electron mobility of 14 two-dimensional semiconductors with composition of MX2, where M (= Mo, W, Sn, Hf, Zr and Pt) is the transition metal, and X is S, Se and Te. We treated the scattering matrix by the deformation potential approximation. We found that out of 14 compounds, MoTe2, HfSe2 and ZrSe2 are promising regarding to their possible high mobility and finite band gap. The phonon limited mobility can be above 2,500 cm(2).V-1.s(-1) at room temperature.

引用

页码：1731 / 1737

页数：7

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