In situ infrared ellipsometry study of hydrogenated amorphous carbon/Si interface formation

被引：7

作者：

Heitz, T ^{[1
]}

Drevillon, B ^{[1
]}

Bouree, JE ^{[1
]}

Godet, C ^{[1
]}

机构：

[1] Ecole Polytech, Phys Interfaces & Couches Minces Lab, CNRS, UPR 0258, F-91128 Palaiseau, France

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 07期

关键词：

D O I：

10.1063/1.120891

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The early stages of the growth of plasma-deposited hydrogenated amorphous carbon him on c-Si have been studied by in situ infrared ellipsometry. Different types of polymeric him have been obtained under soft plasma conditions. From the evolution of optical properties, a uniform growth is observed for films having the highest sp(2) carbon atom content. In contrast, when the him bulk is a highly saturated polymer, where carbon configurations are mostly sp(3), an interlayer of about 20 Angstrom is evidenced, correlated with the formation of sp(2) CHn bonds. Moreover, infrared data tend to prove that this interlayer formation is incompatible with the presence of SiC at the interface. (C) 1998 American Institute of Physics.

引用

页码：780 / 782

页数：3

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