Excitonic devices

被引：92

作者：

Butov, L. V. ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2017年 / 108卷

基金：

美国国家科学基金会;

关键词：

BOSE-EINSTEIN CONDENSATION; ELECTRON-HOLE PLASMA; QUANTUM-WELLS; NOBEL LECTURE; OPTICAL-PROPERTIES; SPIN MEMORY; PHOTOLUMINESCENCE; STORAGE; LIGHT; STATE;

D O I：

10.1016/j.spmi.2016.12.035

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Indirect excitons can be controlled by voltage, can travel over large distances before recombination, and can cool down close to the temperature of semiconductor crystal lattice and below the temperature of quantum degeneracy. These properties form the basis for the development of excitonic devices with indirect excitons. In this contribution, we overview our studies of excitonic devices. We present traps, lattices, conveyers, and ramps for studying basic properties of cold indirect excitons - cold bosons in semiconductor materials. We also present proof-of-principle demonstration for excitonic signal processing devices. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：2 / 26

页数：25

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