Optical and physical characteristics of In-doped ZnO nanorods

被引：35
|
作者：
Fang, Te-Hua [1 ]
Kang, Shao-Hui [1 ]
机构：
[1] Natl Formosa Univ, Inst Mech & Electromech Engn, Yunlin 632, Taiwan
来源：
CURRENT APPLIED PHYSICS | 2010年 / 10卷 / 04期
关键词：
Photoluminescence; Surface potential; Nanorods; Field emission; FIELD-EMISSION PROPERTIES; CONDUCTING FILMS; NANOWIRES; GROWTH; PHOTOLUMINESCENCE; NANOSTRUCTURES; MICROSCOPY;
D O I：
10.1016/j.cap.2010.01.001
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper the effect of indium dopants on structure, optical, electrical and mechanical properties of ZnO nanorods are studied. The average surface potentials and the surface currents of ZnO:In nanorods were 0.25-0.84 mV and 2.2-200 M Omega-cm, respectively. The turn-on threshold field for the vertical ZnO nanorods was around 2-16 V mu m(-1). Emission current densities of 3.3-911.4 mA cm(-2) were obtained for an electrical field of 60-160 V mu m(-1). The photoluminescence (PL) spectrum measured at 15-300 K showed that the intensity of the peak at 2.06 eV increased with decreasing temperature, while the peak at 2.06 eV further red shifted and the peak at 3.39 eV blue shifted. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：1076 / 1086
页数：11
相关论文
共 50 条
  • [1] Photoluminescence and EPR of In-Doped ZnO Superlattice Nanorods
    Yang, Qianhui
    Lou, Liren
    Wang, Guanzhong
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2018, 255 (07):
  • [2] Influence of growth mode on the structural, optical, and electrical properties of In-doped ZnO nanorods
    Jung, M. N.
    Koo, J. E.
    Oh, S. J.
    Lee, B. W.
    Lee, W. J.
    Ha, S. H.
    Cho, Y. R.
    Chang, J. H.
    APPLIED PHYSICS LETTERS, 2009, 94 (04)
  • [3] In-doped ZnO nanorods prepared by electrochemical deposition route
    Gong, J. X.
    Dai, Y. T.
    Zhang, H.
    Pu, L. Y.
    Wang, W.
    OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2018, 12 (11-12): : 744 - 748
  • [4] In-doped ZnO nanorods prepared by electrochemical deposition route
    Dai, Y.T. (Daiyt2003@163.com), 2018, National Institute of Optoelectronics (12): : 11 - 12
  • [5] ALD of In-doped ZnO
    Li, Z.
    Wu, Z.
    Liao, P.
    Chao, T.
    Zhu, L.
    Kaczynski, R.
    Schoop, U.
    Anderson, T. J.
    2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2016, : 1480 - 1483
  • [6] CO sensing characteristics of In-doped ZnO semiconductor nanoparticles
    Dhahri, R.
    Hjiri, M.
    El Mir, L.
    Alamri, H.
    Bonavita, A.
    Iannazzo, D.
    Leonardi, S. G.
    Neri, G.
    JOURNAL OF SCIENCE-ADVANCED MATERIALS AND DEVICES, 2017, 2 (01): : 34 - 40
  • [7] Selective growth of ZnO nanorods by thickness contrast in In-doped ZnO quantum dots seed layer
    Baek, Seung-Eun
    Khang, Dahl-Young
    NANOTECHNOLOGY, 2021, 32 (05)
  • [8] Spin-Coated In-Doped ZnO Nanorods for Transparent Conducting Oxide Applications
    Kim, Jinhwan
    Lee, Gun-Hyun
    Yun, Gun-Ho
    Park, Bae-Won
    Jeong, Ji-Yun
    Sang-Choi
    Kim, Sung-Jin
    Chang, Seung Wook
    Koh, Jung-Hyuk
    SCIENCE OF ADVANCED MATERIALS, 2017, 9 (07) : 1193 - 1196
  • [9] Optical Properties of Al Doped ZnO Nanorods
    Samuel, M. Soosen
    Koshy, Jiji
    Chandran, Anoop
    George, K. C.
    OPTICS: PHENOMENA, MATERIALS, DEVICES, AND CHARACTERIZATION: OPTICS 2011: INTERNATIONAL CONFERENCE ON LIGHT, 2011, 1391
  • [10] Growth of branched In-doped ZnO nanowires: Structural and Optical Properties
    Kim, S. H.
    Umar, Ahmad
    Hwang, S. W.
    Al-Garni, H.
    Abaker, M.
    Al-Sayari, S. A.
    Dar, G. N.
    Al-Hajry, A.
    PROCEEDINGS OF THE FIFTH SAUDI PHYSICAL SOCIETY CONFERENCE (SPS5), 2011, 1370
12345