Enhanced Charge Transfer Kinetics of Dye Sensitized Solar Cells Using a Nb2O5/ZnO Heterojunction Nanorod Photoanode

被引：5
作者：
Park, Ji Young [1 ]
Yun, Hyeong Jin [1 ]
Min, Bong-Ki [2 ]
Ahn, Kwang-Soon [1 ]
Lee, Do Kyung [3 ]
Kim, Jae Hong [1 ]
机构：
[1] Yeungnam Univ, Dept Chem Engn, Kyongsan 712749, South Korea
[2] Yeungnam Univ, Ctr Res Facil, Kyongsan 712749, South Korea
[3] Catholic Univ Daegu, Dept Adv Energy Mat Sci & Engn, Kyongsan 712749, South Korea
来源：
SCIENCE OF ADVANCED MATERIALS | 2016年 / 8卷 / 04期
关键词：
Nb2O5; Energy Barrier Layer; ZnO; Photoanode; ELECTRODES;
D O I：
10.1166/sam.2016.2676
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
This paper presents a novel strategy for the design of efficient DSSCs using a Nb2O5 energy barrier layer on ZnO nanorods. A monoclinic Nb2O5 energy barrier layer can be deposited readily on a ZnO nanorod by dip-coating method. The optimized Nb2O5/ZnO photoanode exhibits eta, J(sc), V-oc, and FF values of 0.56%, 1.96 mA/cm(2), 0.58 V, and 56%, respectively, which is 30% better than those obtained using the ZnO photoanode. This can be attributed to a decrease in the probability of charge recombination and an increase in the electron collection efficiency due to the presence of a Nb2O5 energy barrier layer between ZnO and the photosensitizer.
引用
收藏
页码：749 / 753
页数：5
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