Fermi-edge singularities in AlxGa1-xAs quantum wells:: Extrinsic versus many-body scattering processes

被引：10

作者：

Mélin, T

Laruelle, F

机构：

[1] CNRS, Lab Microstruct & Microelect, F-92225 Bagneux, France

[2] IEMN, Dept ISEN, F-59652 Villeneuve Dascq, France

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 85卷 / 04期

关键词：

D O I：

10.1103/PhysRevLett.85.852

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A Fano resonance mechanism is evidenced to control the formation of optical Fermi-edge singularities in multisubband systems such as remotely doped AlxGa1-xAs heterostructures. Using Fano parameters, we probe the physical nature of the interaction between Fermi sea electrons and empty conduction subbands. We show that processes of extrinsic origin like alloy disorder prevail easily at 2D over multiple diffusions from charged valence holes expected by many-body scenarios.

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收藏

页码：852 / 855

页数：4

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