High-Aspect Ratio β-Ga2O3 Nanorods via Hydrothermal Synthesis

被引：54

作者：

Bae, Hyun Jeong ^{[1
]}

Yoo, Tae Hee ^{[1
]}

Yoon, Youngbin ^{[1
]}

Lee, In Gyu ^{[1
]}

Kim, Jong Pil ^{[2
]}

Cho, Byung Jin ^{[3
]}

Hwang, Wan Sik ^{[1
]}

机构：

[1] Korea Aerosp Univ, Dept Mat Engn, Goyang 10540, South Korea

[2] Korea Basic Sci Inst, Div Anal & Res, Busan 46742, South Korea

[3] Korea Adv Inst Sci & Technol, Sch Elect Engn, Daejeon 34141, South Korea

来源：

NANOMATERIALS | 2018年 / 8卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

low dimensional structures; hydrothermal crystal growth; nanomaterials; Ga2O3; nanorods; MORPHOLOGY CONTROLLABLE SYNTHESIS; TEMPLATE-FREE SYNTHESIS; ALPHA-GAOOH; GALLIUM; NANOSTRUCTURES; DEGRADATION; FABRICATION; CONVERSION; PARTICLES; NANOWIRES;

D O I：

10.3390/nano8080594

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

High-aspect ratio beta-Ga2O3 nanorods consisting of prism-like crystals were formed using gallium oxyhydroxide and ammonia hydroxide via a hydrothermal synthesis followed by the subsequent calcination process. The formation of high-aspect ratio beta-Ga2O3 nanorods was attributed to the oriented attachment mechanism that was present during the hydrothermal synthesis. A field-effect transistor was fabricated using the high-aspect ratio beta-Ga2O3 nanorod, and it exhibited the typical charge transfer properties of an n-type semiconductor. This facile approach to forming high-aspect ratio nanorods without any surfactants or additives can broaden the science of beta-Ga2O3 and expedite the integration of one-dimensional beta-Ga2O3 into future electronics, sensors, and optoelectronics.

引用

页数：10

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