Performance Enhancement of Al2O3/H-Diamond MOSFETs Utilizing Vacuum Annealing and V2O5 as a Surface Electron Acceptor

被引：24

作者：

Macdonald, David A. ^{[1
]}

Crawford, Kevin G. ^{[1
]}

Tallaire, Alexandre ^{[2
]}

Issaoui, Riadh ^{[2
]}

Moran, David A. J. ^{[1
]}

机构：

[1] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland

[2] Univ Paris 13, LSPM CNRS, F-93430 Villetaneuse, France

来源：

IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 09期

基金：

英国工程与自然科学研究理事会;

关键词：

Diamond; FETs; transfer doping; V2O5; TERMINATED DIAMOND; POWER; FETS;

D O I：

10.1109/LED.2018.2856920

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the performance enhancement of 250-nm gate-length H-diamond FETs through thermal treatment of devices at 400 degrees C and the incorporation of V2O5 as a surface electron acceptor layer. Encapsulation of the H-diamond surface with V2O5 is found to increase the transfer doping efficiency and reduce the device access resistance. A reduction in ohmic contact resistance and channel resistance beneath the gate after thermal treatment at 400 degrees C was found to further reduce the device oN-resistance and increase the maximum drain current and peak transconductance. These devices demonstrate the highest drain current (375 mA/mm) and transconductance (98 mS/mm), yet reported for H-diamond FETs of this gate length that incorporate an electron acceptor oxide layer.

引用

页码：1354 / 1357

页数：4

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