Anti-Stokes luminescence in nitrogen doped GaAs1-xPx alloys

被引：0

作者：

Meftah, A

Oueslati, M

Scalbert, D

机构：

[1] Unit Tunis 2, Fac Sci, Dept Phys, Tunis 1060, Tunisia

[2] Univ Montpellier 2, Etud Semicond Grp, F-34095 Montpellier 5, France

来源：

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 1998年 / 1卷 / 01期

关键词：

D O I：

10.1051/epjap:1998105

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In indirect band gap GaAs1-xPx alloys, the Nx levels of the excitons bound to nitrogen have been resonantly excited. The detection of the photoluminescence (PL) at energies greater than the excitation energy (Anti-Stokes Luminescence (ASL)) shows a new PL band which appears at temperatures lower than 40 K. Its mean energy 2.205 eV is nearly independent of the alloy composition. We investigate ASL as a function of excitation photon energy, excitation power and temperature. Moreover ASL has been time resolved.

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页码：35 / 38

页数：4

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