Anti-Stokes luminescence in nitrogen doped GaAs1-xPx alloys

被引：0
|
作者：
Meftah, A
Oueslati, M
Scalbert, D
机构：
[1] Unit Tunis 2, Fac Sci, Dept Phys, Tunis 1060, Tunisia
[2] Univ Montpellier 2, Etud Semicond Grp, F-34095 Montpellier 5, France
来源：
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 1998年 / 1卷 / 01期
关键词：
D O I：
10.1051/epjap:1998105
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In indirect band gap GaAs1-xPx alloys, the Nx levels of the excitons bound to nitrogen have been resonantly excited. The detection of the photoluminescence (PL) at energies greater than the excitation energy (Anti-Stokes Luminescence (ASL)) shows a new PL band which appears at temperatures lower than 40 K. Its mean energy 2.205 eV is nearly independent of the alloy composition. We investigate ASL as a function of excitation photon energy, excitation power and temperature. Moreover ASL has been time resolved.
引用
收藏
页码：35 / 38
页数：4
相关论文
共 50 条
  • [1] Anti-Stokes luminescence in nitrogen doped GaAs1-xPx alloys
    Meftah, A.
    Oueslati, M.
    Scalbert, D.
    EPJ Applied Physics, 1998, 1 (01): : 35 - 38
  • [2] INFRARED LUMINESCENCE OF GAAS1-XPX
    HEINE, G
    MORGENST.M
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 18 (02): : K139 - K141
  • [3] CATHODOLUMINESCENCE OF GAAS1-XPX ALLOYS
    MARCINIAK, HC
    WITTRY, DB
    JOURNAL OF APPLIED PHYSICS, 1975, 46 (11) : 4823 - 4828
  • [4] REFLECTIVITY OF GAAS1-XPX ALLOYS
    WOOLLEY, JC
    THOMPSON, AG
    RUBENSTEIN, M
    PHYSICAL REVIEW LETTERS, 1965, 15 (16) : 670 - +
  • [5] HOT-ELECTRON LUMINESCENCE AND POLARIZATION IN GAAS1-XPX ALLOYS
    CHARFI, FF
    ZOUAGHI, M
    PLANEL, R
    ALAGUILLAUME, CB
    PHYSICAL REVIEW B, 1986, 33 (08): : 5623 - 5632
  • [6] RESONANT EXCITATION OF BOUND EXCITON LUMINESCENCE IN GAAS1-XPX ALLOYS
    WOLFORD, DJ
    STREETMAN, BG
    LAI, S
    KLEIN, MV
    SOLID STATE COMMUNICATIONS, 1979, 32 (01) : 51 - 54
  • [7] ABSORPTION AND PHOTOLUMINESCENT MEASUREMENTS IN INDIRECT, NITROGEN DOPED GAAS1-XPX
    GAL, M
    GOROG, T
    KERESZTURY, A
    SOLID STATE COMMUNICATIONS, 1977, 21 (05) : 491 - 493
  • [8] ELECTRON TRAPS IN GAAS1-XPX ALLOYS
    CALLEJA, E
    MUNOZ, E
    GARCIA, F
    APPLIED PHYSICS LETTERS, 1983, 42 (06) : 528 - 530
  • [9] STACKING FAULTS IN GAAS1-XPX ALLOYS
    ABRAHAMS, MS
    TIETJEN, JJ
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (10) : 2491 - &
  • [10] PHOTO-LUMINESCENCE AND ELECTRO-LUMINESCENCE OF NITROGEN ISOELECTRONIC TRAPS IN GAAS1-XPX
    TAKAI, M
    RYSSEL, H
    KRANZ, H
    BAYERL, P
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 211 - 216
12345