Liquid-Gated High Mobility and Quantum Oscillation of the Two-Dimensional Electron Gas at an Oxide Interface

被引：59

作者：

Zeng, Shengwei ^{[1
,2
]}

Lu, Weiming ^{[1
,6
]}

Huang, Zhen ^{[1
]}

Liu, Zhiqi ^{[1
,7
]}

Han, Kun ^{[1
,2
]}

Gopinadhan, Kalon ^{[1
]}

Li, Changjian ^{[1
,3
]}

Guo, Rui ^{[1
]}

Zhou, Wenxiong ^{[1
,2
]}

Ma, Haijiao Harsan ^{[1
,2
]}

Jian, Linke ^{[1
]}

Venkatesan, Thirumalai ^{[1
,2
,3
,4
,5
]}

Ariando ^{[1
,2
,3
]}

机构：

[1] Natl Univ Singapore, NUSNNI NanoCore, Singapore 117411, Singapore

[2] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore

[3] Natl Univ Singapore, Grad Sch Integrat Sci & Engn NGS, 28 Med Dr, Singapore 117456, Singapore

[4] Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117575, Singapore

[5] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117576, Singapore

[6] Harbin Inst Technol, Dept Sci, Condense Matter Sci & Technol Inst, Harbin 150001, Peoples R China

[7] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

来源：

ACS NANO | 2016年 / 10卷 / 04期

基金：

新加坡国家研究基金会;

关键词：

mobility; LaAlO3/SrTiO3; interfaces; electronic double layer transistors (EDLT); Ionic liquid; electric field effect; Shubnikov-de Haas (SdH) oscillation; FIELD-EFFECT TRANSISTORS; METAL-INSULATOR-TRANSITION; LAALO3/SRTIO3; INTERFACE; SUPERCONDUCTIVITY; ENHANCEMENT; MODULATION; CONDUCTION; TRANSPORT;

D O I：

10.1021/acsnano.6b00409

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Electric field effect in electronic double layer transistor (EDLT) configuration with ionic liquids as the dielectric materials is a powerful means of exploring various properties in different materials. Here, we demonstrate the modulation of electrical transport properties and extremely high mobility of two-dimensional electron gas at LaAlO3/SrTiO3 (LAO/STO) interface through ionic liquid-assisted electric field effect. With a change of the gate voltages, the depletion of charge carrier and the resultant enhancement of electron mobility up to 19 380 cm(2)/(V s) are realized, leading to quantum oscillations of the conductivity at the LAO/STO interface. The present results suggest that high-mobility oxide interfaces, which exhibit quantum phenomena, could be obtained by ionic liquid-assisted field effect.

引用

页码：4532 / 4537

页数：6

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