High-temperature operation of AlGaN/GaN HEMTs direct-coupled FET logic (DCFL) integrated circuits

被引：118

作者：

Cai, Yong ^{[1
]}

Cheng, Zhiqun ^{[1
]}

Yang, Zhenchuan ^{[1
]}

Tang, Chak Wah ^{[1
]}

Lau, Kei May ^{[1
]}

Chen, Kevin J. ^{[1
]}

机构：

[1] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Kowloon, Hong Kong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 05期

关键词：

AlGaN/GaN; CF4 plasma treatment; direct-coupled FET logic (DCFL); enhancement mode (E-mode); high electron mobility transistor (HEMT); high-temperature electronics; IC; threshold voltage; ELECTRON-MOBILITY TRANSISTORS; PLASMA TREATMENT; ENHANCEMENT-MODE; DEPLETION-MODE; SAPPHIRE;

D O I：

10.1109/LED.2007.895391

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents the high-temperature performance of AlGaN/GaN HEMT direct-coupled FET logic (DCFL) integrated circuits. At 375 degrees C, enhancement-mode (E-mode) AlGaN/GaN HEMTs which are used as drivers in DCFL circuits exhibit proper E-mode operation with a threshold voltage V-TH) of 0.24 V and a peak current density of 56 mA/mm. The monolithically integrated E/D-mode AlGaN/GaN HEMTs DCFL circuits deliver stable operations at 375 degrees C: An E/D-HEMT inverter with a drive/load ratio of 10 exhibits 0.1 V for logic-low noise margin (NML) and 0.3 V for logic-high-noise margin (NMH) at a supply voltage (V-DD) of 3.0 V, a 17-stage ring oscillator exhibits a maximum oscillation frequency of 66 MHz, corresponding to a minimum propagation delay (tau(pd)) of 446 ps/stage at V-DD of 3.0 V.

引用

页码：328 / 331

页数：4

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