Thermoelectric property of Cu2O thin film deposited by reactive ion plating method

被引：0

作者：

Uchiyama, H. ^{[1
]}

Hasegawa, Y. ^{[1
]}

Morita, H. ^{[2
]}

Kurokouchi, A. ^{[2
]}

Wada, K. ^{[2
]}

Komine, T. ^{[3
]}

机构：

[1] Saitama Univ, Grad Sch Sci & Engn, Sakura Ku, 255,Shimo Okubo, Urawa, Saitama 3388570, Japan

[2] Saitama Ind Technol Ctr, Saitama 3330844, Japan

[3] Ibaraki Univ, Dept Engn, Ibaraki 3168511, Japan

来源：

ICT'06: XXV INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS | 2006年

基金：

日本学术振兴会;

关键词：

D O I：

暂无

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

Cuprous oxide Cu-O thin film was deposited by Reactive Ion Plating (RIP) method, and the thermoelectric properties of Cu-O thin films were studied with varying oxygen content. Copper was evaporated by electron gun, and thin film of Cu-O was deposited with reaction in oxygen plasma. Adjusting of oxygen gas flow rate could control oxygen content of the deposited thin film. Seebeck coefficient and resistivity of the Cu2O were 0.7 mV/K and 83.5 Omega cm at room temperature, respectively. Since the resistivity was still high for the thermoelectric material, we attempted to fabricate the Cu2O thin film using copper, oxygen gas and nitrogen gas as a dopant. As a result, the Seebeck and resistivity could achieve 0.3mV/K and 2 Omega cm, which is the lowest resistivity reported without hydrogen treatment.

引用

页码：379 / +

页数：2

共 11 条

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