Effect of post-thermal annealing on properties of ZnO thin film grown on c-Al2O3by metal-organic chemical vapor deposition

被引：73
|
作者：
Yang, XT
Du, GT [1 ]
Wang, XQ
Wang, JZ
Liu, BY
Zhang, YT
Liu, D
Liu, DL
Ong, HC
Yang, SR
机构：
[1] Jilin Univ, State Key Lab Integrated Optoelect, Coll Elect Sci & Engn, Changchun 130023, Peoples R China
[2] Chinese Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2003年 / 252卷 / 1-3期
基金：
中国国家自然科学基金;
关键词：
metalorganic chemical vapor deposition; oxides; semiconducting II-VI materials;
D O I：
10.1016/S0022-0248(03)00898-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
In this paper, high-quality ZnO film was grown by metal-organic chemical vapor deposition. Post-thermal annealing was performed on ZnO film in vacuum and oxygen condition. We could find only the X-ray diffraction pattern of (0 0 2) ZnO film indicating strong c-oriented growth. The quality of ZnO film was improved by thermal annealing in vacuum as confirmed by XRD and photoluminescence measurement. Raman scattering on as-grown ZnO film indicated that the quality of ZnO film was improved by thermal annealing in oxygen. The intensity of deep-level emission increased much after annealing in oxygen, while it nearly did not change after annealing in vacuum. We believed that the deep-level emission was related to zinc vacancy. The resistivity increased from 2.4 to 1100Omegacm after thermal annealing in oxygen. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：275 / 278
页数：4
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