Dynamic properties of InAs self-assembled quantum dots evaluated by capacitance-voltage measurements

被引：9

作者：

Horiguchi, N

Futatsugi, T

Nakata, Y

Yokoyama, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 9AB期

关键词：

InAs dot; dynamic properties; capacitance voltage measurement; electron transport; tunneling;

D O I：

10.1143/JJAP.36.L1246

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the dynamic properties of electron transport between InAs self-assembled quantum dots and n-GaAs substrate through tunneling barrier. The time constant of the electron transport was estimated by making use of the frequency dependence of the capacitance increase due tcs the InAs dots. The time constant ranged from microseconds to submicroseconds in samples with 40 nm tunneling barriers. The value was consistent with the theoretically calculated CR time constant.

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页码：L1246 / L1249

页数：4

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