N-doped Al2O3 thin films deposited by atomic layer deposition

被引：24

作者：

Kim, Minjae ^{[1
]}

Kang, Kyung-Mun ^{[1
]}

Wang, Yue ^{[1
]}

Park, Hyung-Ho ^{[1
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 03722, South Korea

来源：

THIN SOLID FILMS | 2018年 / 660卷

关键词：

Atomic layer deposition; Nitrogen doping; Oxygen defect reduction; Deposition temperature; Leakage current; ELECTRICAL CHARACTERISTICS; GROWTH; TEMPERATURE; SILICON; CAPACITORS; AL(CH3)(3); OZONE; HFO2;

D O I：

10.1016/j.tsf.2018.04.021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The present study focused on nitrogen doped Al2O3 thin films using atomic layer deposition, varying the deposition temperature from 55 to 170 degrees C. Al2O3 thin film growth rate and electrical properties were mostly dependent on deposition temperature. Nitrogen concentration decreased from 2.7 to 2.4% with increasing deposition temperature. X-ray photoelectron spectroscopic analysis confirmed that nitrogen doping in Al2O3 decreased formation of oxygen related defects, including non-lattice oxygen. Surface morphology analyses also showed that N-doping reduced Al2O3 film surface roughness. Reduced oxygen related defects significantly reduced leakage current by 1000 times when comparing with as-deposited films. Minimum leakage current (5x10(-10) A/cm(2)) was observed for N-doped Al2O3 film deposited at 170 degrees C and post-annealed at 400 degrees C, including a decrease by 10 times through N-doping.

引用

页码：657 / 662

页数：6

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