A model for gate-oxide breakdown in CMOS inverters

被引：73

作者：

Rodríguez, R ^{[1
]}

Stathis, JH ^{[1
]}

Linder, BP ^{[1
]}

机构：

[1] IBM Corp, Div Res, Yorktown Hts, NY 10598 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 02期

关键词：

CMOS; dielectric breakdown; hard breakdown (HBD); leakage currents; oxide breakdown; oxide reliability;

D O I：

10.1109/LED.2002.808155

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of oxide breakdown (BD) on the performance of CMOS inverters has been investigated. The results show that the inverter performance can be affected by the BD in a different way depending on the stress polarity applied to the inverter input In all the cases, the oxide BD conduction has been modeled as gate-to-diffusion leakage with a power-law formula of the type I = KVP, which was previously found to describe the BD in-capacitor structures. This implies that the BD physics at oxide level is the same as that at circuit level.

引用

页码：114 / 116

页数：3

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