Effects of Zr doping content on microstructure, ferroelectric and dielectric properties of Na0.5Bi0.5TiO3 thin film

Ion doping is a key factor affecting the microstructure and electrical properties of Na0.5Bi0.5TiO3 (NBT) thin film. In this paper, Na0.5Bi0.5(Ti1-xZrx)O-3 (x=0, 0.01, 0.02, 0.04) thin films were prepared using chemical solution decomposition and the effects of Zr4+ doping content on crystalline, ferroelectric and dielectric properties were characterized. Compared with the other films, NBT with 2 mol% Zr4+ doping content exhibits enhanced ferroelectricity with a remanent polarization (P-r) of 12.3 mu C/cm(2) due to the high densification, as well as reduced leakage current and distortion of Ti-O octahedral. The dielectric constant (epsilon(r)) and dissipation factor (tan delta) on frequency show small dispersion tendency with epsilon(r) of 263 and tan delta 010.067 at 100 kHz. Also, the capacitance-voltage curve displays a relatively sharp feature with a high dielectric tunability of 61.6%. (C) 2014 Elsevier B.V. All rights reserved.