Numerical simulation of CuInxGa1-xSe2 solar cells by AMPS-1D

被引：37

作者：

Bouloufa, A. ^{[1
]}

Djessas, K. ^{[1
]}

Zegadi, A. ^{[1
]}

机构：

[1] Univ Perpignan, Lab MEPS, F-66860 Perpignan, France

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 15期

关键词：

CIGS; photovoltaic parameters; AMPS-1D; conduction band offset; In2S3;

D O I：

10.1016/j.tsf.2006.12.110

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

in this work, we have used one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-ID) to design solar cells based on CuIn1-x ,GaxSe2 (CIGS) as the absorber material and study their device performances. Starting with a ZnO/In2S3/CIGS solar cell, an inverted surface layer and a grading space charge region (SCR) in the absorber were taken into account. The buffer layer used improves the open-circuit voltage (V-oc) without significantly sacrificing the short-circuit current density (J(sc)). Photovoltaic parameters were determined using current density-voltage (J-V) curve. Quantum efficiency (QE) is about 94% in the visible range. In2(S)S(3) buffer layer have shown to be a competitive alternative to devices with the CdS buffer. (C) 2006 Elsevier B.V. All rights reserved.

引用

页码：6285 / 6287

页数：3

共 9 条

[1]

[Anonymous], PHYS SEMICONDUCTOR D

[2] Electrical modification in Cu(In,Ga)Se2 thin films by chemical bath deposition process of CdS films -: art. no. 053701 [J].