High efficiency thin film silicon solar cell and module

被引：39
|
作者：
Yamamoto, K [1 ]
Nakajima, A [1 ]
Yoshimi, M [1 ]
Sawada, T [1 ]
Fukuda, S [1 ]
Hayashi, K [1 ]
机构：
[1] Kaneka Corp, Otsu, Shiga 5200104, Japan
来源：
CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年
关键词：
D O I：
10.1109/PVSC.2002.1190800
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
An initial efficiency of 14.5% (Jsc=14.4mA/cm(2), Voc=1.41V, FF=71.9%) has been achieved for a-Si:H/transparent inter-layer/crystalline Si solar cell (total area of I cm(2)). Both a-Si and crystalline Si films were fabricated by plasma chemical vapor deposition at low temperature. The short circuit current (Jsc) was enhanced by the introduction of transparent interlayer without increasing the thickness of a-Si:H layer. An initial aperture efficiency of 12.3% has been achieved for 910x455mm(2) a-Si/crystalline Si thin film integrated solar cell module. Reasonably high deposition rate of 1 1 A/s for the deposition of crystalline Si for 1x 1 m(2) area has been achieved. By applying a deposition conditions of this high deposition rate, an initial aperture efficiency of 11.2% has been obtained above sized Si stacked solar cell module.
引用
收藏
页码：1110 / 1113
页数：4
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