Single-crystal Cu(In,Ga)Se2 solar cells grown on GaAs substrates

被引：31
作者：
Nishinaga, Jiro [1 ]
Nagai, Takehiko [1 ]
Sugaya, Takeyoshi [1 ]
Shibata, Hajime [1 ]
Niki, Shigeru [1 ]
机构：
[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Photovolta, Tsukuba, Ibaraki 3058568, Japan
来源：
APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 08期
关键词：
MOLECULAR-BEAM EPITAXY; THIN-FILMS; EFFICIENCY; CUINSE2; GAAS(001);
D O I：
10.7567/APEX.11.082302
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Single-crystal Cu(In,Ga)Se-2 (GIGS) solar cells were produced with techniques developed for high-efficiency polycrystalline GIGS solar cells. The GIGS layers of a lattice match with GaAs were grown on GaAs(001) substrates by co-evaporation. The presence of a single-crystal GIGS layer without dislocations was confirmed by transmission electron microscopy. Alkaline metal incorporations were achieved by doping and postdeposition treatments. Ga grading structures were fabricated by two-layer deposition with different Ga contents. The Ga grading significantly increased the fill factor and open-circuit voltage. The best efficiency of 20% was achieved after heat-light soaking. (C) 2018 The Japan Society of Applied Physics
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页数：5
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