Influence of defects on charge and energy transfer in layered crystals

被引:6
作者
Abdullayev, N. A. [1 ]
Kerimova, T. G. [1 ]
机构
[1] Inst Phys Azerbaijan NAS, AZ-1143 Baku, Azerbaijan
关键词
Anisotropy; Conductivity; Stacking faults; Layered crystals; CONDUCTIVITY; ELECTRONS;
D O I
10.1016/j.physb.2009.08.259
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
It is shown that plane defects, which is due to the stacking faults in layered crystals influence substantially charge and energy transfer mechanism in the direction perpendicular to the layers. Dominant mechanism of charge transfer in the direction perpendicular to the layers in different graphite's at low temperatures (T < 300 K) is the variable range hopping conductivity. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:5215 / 5217
页数:3
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