The tunneling field effect transistor (TFET) as an addon for ultra-low-voltage analog and digital processes (vol 25, pg 195, 2004)

被引：32
作者：
Nirschl, Th.
Weis, M.
Fulde, M.
Schmitt-Landsiedel, D.
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 04期
关键词：
D O I：
10.1109/LED.2007.893272
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：315 / 315
页数：1
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